• Part: RF5725
  • Description: SINGLE-BAND FRONT END MODULE
  • Manufacturer: RF Micro Devices
  • Size: 372.76 KB
Download RF5725 Datasheet PDF
RF Micro Devices
RF5725
RF5725 is SINGLE-BAND FRONT END MODULE manufactured by RF Micro Devices.
Features - Single Module Radio Front End - Single Supply Voltage 3.0V to 5V - Integrated 2.4GHz to 2.5GHz b/g Amplifier LNA, TX/RX Switch, PDETECT Coupler - POUT=17d Bm, 11g, OFDM at <3% EVM, 21d Bm 11b Meeting 11b Spectral Mask - Low Height Package, Suited for Si P and Co B Designs Applications - Cellular handsets - Mobile devices - Tablets - Consumer electronics - Gaming - Netbooks/Notebooks - TV/monitors/video - Smart Energy LNA VCC 1 RX OUT 2 TX IN 3 VREG 4 12 C BT SP3T 2F0 Filter 11 ANT 10 GND 9 VCC 678 PDETECT VCC VCC N/C Functional Block Diagram Product Description The RF5725 is a single-chip integrated front-end module (FEM) for high performance Wi Fi applications in the 2.4GHz to 2.5GHz ISM band. This FEM greatly reduces the number of external ponents, minimizing footprint and assembly cost of the overall 802.11b/g solution. The RF5725 has an integrated b/g power amplifier, LNA, a Coupler Power detector, and TX filtering. It also is capable of switching between Wi Fi RX, Wi Fi TX, and BTH RX/TX operations. This device is manufactured using Ga As HBT and p HEMT processes on a 3mmx3mmx0.5mm 16-pin QFN package. This module meets or exceeds the RF front-end needs of 802.11b/g Wi Fi RF systems. DS120214 Ordering Information RF5725 RF5725SR RF5725TR7 RF5725PCK-410 Standard 25 piece bag Standard 100 piece reel Standard 2500 piece reel Fully assembled evaluation board tuned for 2.4GHz to 2.5GHz and 5 loose sample pieces Optimum Technology Matching® Applied Ga As HBT Si Ge Bi CMOS - Ga As p HEMT Ga N HEMT - Ga As MESFET In Ga P HBT Si Bi CMOS Si Ge HBT Si CMOS Si...